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參數(shù)資料
| 型號： | HY27LF161G2M-VPMS |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| 中文描述： | 1Gbit的（128Mx8bit / 64Mx16bit）NAND閃存 |
| 文件頁數(shù)： | 3/48頁 |
| 文件大?。?/td> | 476K |
| 代理商： | HY27LF161G2M-VPMS |
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Rev 0.7 / Apr. 2005
3
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V : HY27UFXX1G2M
- 1.8V device: VCC = 1.7 to 1.95V : HY27SFXX1G2M
Memory Cell Array
= (2K+ 64) Bytes x 64 Pages x 1,024 Blocks
= (1K+32) Words x 64 pages x 1,024 Blocks
PAGE SIZE
- x8 device : (2K + 64 spare) Bytes
: HY27(U/S)F081G2M
- x16 device: (1K + 32 spare) Words
: HY27(U/S)F161G2M
BLOCK SIZE
- x8 device: (128K + 4K spare) Bytes
- x16 device: (64K + 2K spare) Words
PAGE READ / PROGRAM
- Random access: 27us
(1)
(max.)
- Sequential access: 60ns
(1)
(min.)
- Page program time: 300us (typ.)
COPY BACK PROGRAM MODE
- Fast page copy without external buffering
CACHE PROGRAM MODE
- Internal Cache Register to improve the program
throughput
NOTE:
1. These parameters are applied to the errata.
FAST BLOCK ERASE
- Block erase time: 2ms (Typ.)
STATUS REGISTER
ELECTRONIC SIGNATURE
- Manufacturer Code
- Device Code
CHIP ENABLE DON'T CARE OPTION
- Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
DATA INTEGRITY
- 100,000 Program/Erase cycles
- 10 years Data Retention
PACKAGE
- HY27(U/S)F(08/16)1G2M-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27(U/S)F(08/16)1G2M-T (Lead)
- HY27(U/S)F(08/16)1G2M-TP (Lead Free)
- HY27(U/S)F(08/16)1G2M-V(P)
: 48-Pin WSOP1 (12 x 17 x 0.7 mm)
- HY27(U/S)F(08/16)1G2M-V (Lead)
- HY27(U/S)F(08/16)1G2M-VP (Lead Free)
- HY27(U/S)F(08/16)1G2M-F(P)
: 63-Ball FBGA (9.5 x 12 x 1.0 mm)
- HY27(U/S)F(08/16)1G2M-F (Lead)
- HY27(U/S)F(08/16)1G2M-FP (Lead Free)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27SF081G2M-TEP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TES | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TIB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TIP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2M-TIS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27SA081G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SA161G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SA1G1M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SAXXX | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
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