參數(shù)資料
型號(hào): HY27LF161G2M-VPMB
廠(chǎng)商: Hynix Semiconductor Inc.
英文描述: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
中文描述: 1Gbit的(128Mx8bit / 64Mx16bit)NAND閃存
文件頁(yè)數(shù): 46/48頁(yè)
文件大?。?/td> 476K
代理商: HY27LF161G2M-VPMB
Rev 0.7 / Apr. 2005
46
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
MARKING INFORMATION
Pack ag
Mark ing Ex am ple
FBGA
K
O
R
H
Y
2
7
x
F
x
x
1
G
2
M
x
x
x
x
Y
W
W
x
x
- hynix
- K OR
- H Y 2 7x Fx x 1 G2 Mx x x x
HY :
HYNIX
27:
NAND Flash
x:
Power Supply
F:
Classification
x x:
Bit Organization
1G:
Density
2:
Mode
M:
Version
x :
Package Type
x :
Package Material
x :
Operating Temperature
x :
Bad Block
- Y :
Year (ex: 5= year 2005, 06= year 2006)
- w w :
Work Week (ex: 12= work week 12)
- x x :
Process Code
Note
- Capital Letter
- S m all Letter
: Hynix Symbol
: Origin Country
: Part Number
: U(2.7V~ 3.6V), L(2.7V), S(1.8V)
: Single Level Cell+ Single Die+ Large Block
: 08(x8), 16(x16)
: 1Gbit
: 1nCE & 1R/nB; Sequential Row Read Disable)
: 1st Generation
: F(63 FBGA)
: Blank(Normal), P(Lead Free)
: C(0
~ 70
), E(-25
~ 85
)
M(-30
~ 85
), I(-40
~ 85
)
: B(Included Bad Block), S(1~ 5 Bad Block),
P(All Good Block)
: Fixed Item
: Non-fixed Item
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY27LF161G2M-VPMP 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27LF161G2M-VPMS 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SA081G1M 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SA161G1M 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
HY27SA1G1M 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory