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參數(shù)資料
| 型號(hào)： | HY27LF161G2M-VIP |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| 中文描述： | 1Gbit的（128Mx8bit / 64Mx16bit）NAND閃存 |
| 文件頁(yè)數(shù)： | 41/48頁(yè) |
| 文件大?。?/td> | 476K |
| 代理商： | HY27LF161G2M-VIP |
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Rev 0.7 / Apr. 2005
41
Preliminary
HY27UF(08/ 16)1G2M Series
HY27SF(08/ 16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
5. APPENDIX : Extra Features
5.1 Automatic Page0 Read after Power Up
The timing diagram related to this operation is shown in Fig. 24
Due to this functionality the CPU can directly download the boot loader from the first page of the NAND flash, storing
it inside the internal cache and starting the execution after the download completed.
5.2 Addressing for program operation
Within a block, the pages must be programmed consecutively from LSB (least significant bit) page of the block to MSB
(most significant bit) page of the block. Random address programming is prohibited. See Fig. 28.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY27LF161G2M-VIS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27LF161G2M-VMB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27LF161G2M-VMP | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27LF161G2M-VMS | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27LF161G2M-VPCB | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY27LF161G2M-VIS | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27LF161G2M-VMB | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27LF161G2M-VMP | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27LF161G2M-VMS | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27LF161G2M-VPCB | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
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