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參數(shù)資料
| 型號(hào)： | HX6408KVRM |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 25 ns, UUC35 |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大小： | 101K |
| 代理商： | HX6408KVRM |
HX6408
6
TAVAVR
Address Read Cycle Time
25
ns
TAVQV
Address Access Time
25
ns
TAXQX
Address Change to Output Invalid Time
3
ns
TSLQV
Chip Select Access Time
25
ns
TSLQX
Chip Select Output Enable Time
5
ns
TSHQZ
Chip Select Output Disable Time
10
ns
TPHQV
Sleep Enable Access Time
25
ns
TPHQX
Sleep Enable Output Enable Time
5
ns
TPLQZ
Sleep Enable Output Disable Time
10
ns
TGLQV
Output Enable Access Time
9
ns
TGLQX
Output Enable Output Enable Time
0
ns
TGHQZ
Output Enable Output Disable Time
9
ns
ASYNCHRONOUS READ CYCLE AC TIMING CHARACTERISTICS (1)
Worst Case (3)
Symbol
Parameter
Typical
(2)
-55 to 125
°
C
Min Max
Units
(1) Test conditions: input switching levels,VIL/VIH=0V/3V, input rise and fall times <1 ns/V, input and output timing reference levels shown in the
Tester AC Timing Characteristics table, capacitive output loading C
L
>50 pF, or equivalent capacitive output loading C
L
=5 pF for TSHQZ, TPLQZ
TGHQZ. For C
>50 pF, derate access times by 0.02 ns/pF (typical).
(2) Typical operating conditions: VDD=3.3 V, TA=25
°
C, pre-radiation.
(3) Worst case operating conditions: VDD=3.0 V to 3.6 V, TA= -55
°
C to 125
°
C, post total dose at 25
°
C.
HIGH
IMPEDANCE
NCS
NOE
DATA VALID
NSL
T
AVAVR
T
AVQV
T
SLQV
T
AXQX
T
SLQX
T
SHQZ
T
PHQX
T
PHQV
T
GLQX
T
GLQV
T
GHQZ
T
PLQZ
ADDRESS
(NWE = high)
DATA OUT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HX6408KVRN | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408-QFM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408-QFN | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408-QHM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408-QHN | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
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