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參數(shù)資料
| 型號： | HX6408-VRN |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 25 ns, UUC35 |
| 封裝： | DIE |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 101K |
| 代理商： | HX6408-VRN |
HX6408
4
Parameter
Max
Symbol
Test Conditions
Worst Case
Units
CAPACITANCE
(1)
Symbol
Test Conditions
Min
Max
Typical
(1)
Units
VDR
Data Retention Voltage
2.25
V
IDR
Data Retention Current
1
mA
(1) This parameter is tested during initial design characterization only.
RECOMMENDED OPERATING CONDITIONS
Symbol
Max
Typ
Description
Parameter
Min
Worst Case
(2)
Units
VDD
Supply Voltage (referenced to VSS)
3.0
3.3
3.6
V
TA
Ambient Temperature
-55
25
125
°
C
VPIN
Voltage on Any Pin (referenced to VSS)
-0.3
VDD+0.3
V
Min
Typical
(1)
CI
Input Capacitance
7
pF
VI=VDD or VSS, f=1 MHz
CO
Output Capacitance
9
pF
VIO=VDD or VSS, f=1 MHz
(1) Typical operating conditions: TA= 25
°
C, pre-radiation.
(2) Worst case operating conditions: TA= -55
°
C to +125
°
C, post total dose at 25
°
C.
DATA RETENTION CHARACTERISTICS
Parameter
(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not
implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.
ABSOLUTE MAXIMUM RATINGS
(1)
NCS=VDD=VDR
VI=VDR or VSS
NCS=VDR
VI=VDR or VSS
VDD
Supply Voltage Range (2)
-0.5
4.6
V
VPIN
Voltage on Any Pin (2)
-0.5
VDD+0.5
V
TSTORE
Storage Temperature (Zero Bias)
-65
150
°
C
°
C
TSOLDER
Soldering Temperature (5 Seconds)
270
PD
Maximum Power Dissipation (3)
2
W
IOUT
DC or Average Output Current
25
mA
VPROT
ESD Input Protection Voltage
2000
V
36 Pin FP
2
TJ
Junction Temperature
175
°
C
Parameter
Symbol
Θ
JC
Thermal Resistance (Jct-to-Case)
°
C/W
Units
Rating
Min
Max
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HX6408KBNN | 512K X 8 STANDARD SRAM, 25 ns, UUC35 |
| HX6408KVRM | 512K X 8 STANDARD SRAM, 25 ns, UUC35 |
| HY51V17400CSLT-60 | 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 |
| HY62U8200LLST-I-10 | 256K X 8 STANDARD SRAM, 100 ns, PDSO32 |
| HY62V16100LR2-I-12 | 128K X 8 STANDARD SRAM, 120 ns, PDSO44 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HX6408XEFM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408XEFN | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408XEHM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408XEHN | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
| HX6408XENM | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:512k x 8 STATIC RAM |
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