參數(shù)資料
型號(hào)： HUFA76645S3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 219K
代理商： HUFA76645S3S
2002 Fairchild Semiconductor Corporation
HUFA76645P3, HUFA76645S3S Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
I
D
= 250
μ
A, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
V
DS
= 95V, V
GS
= 0V
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
16V
100
-
-
V
90
-
-
V
Zero Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
I
D
= 75A, V
GS
= 10V (Figures 9, 10)
I
D
= 63A, V
GS
= 5V (Figure 9)
I
D
= 62A, V
GS
= 4.5V (Figure 9)
1
-
3
V
Drain to Source On Resistance
-
0.012
0.014
-
0.013
0.015
-
0.0135
0.0155
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
TO-220 and TO-263
-
-
0.48
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
-
-
62
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 50V, I
D
= 62A
V
GS
=
4.5V, R
GS
= 2.4
(Figures 15, 21, 22)
-
-
490
ns
Turn-On Delay Time
-
17
-
ns
Rise Time
-
310
-
ns
Turn-Off Delay Time
-
46
-
ns
Fall Time
-
155
-
ns
Turn-Off Time
-
-
300
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 50V, I
D
= 75A
V
GS
=
10V,
R
GS
= 2.4
(Figures 16, 21, 22)
-
-
175
ns
Turn-On Delay Time
-
11
-
ns
Rise Time
-
106
-
ns
Turn-Off Delay Time
-
69
-
ns
Fall Time
-
175
-
ns
Turn-Off Time
-
-
365
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 50V,
I
D
= 63A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
127
153
nC
Gate Charge at 5V
-
70
84
nC
Threshold Gate Charge
-
3.8
4.6
nC
Gate to Source Gate Charge
-
10
-
nC
Gate to Drain “Miller” Charge
-
34
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
4400
-
pF
Output Capacitance
-
900
-
pF
Reverse Transfer Capacitance
-
280
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 63A
I
SD
= 30A
I
SD
= 63A, dI
SD
/dt = 100A/
μ
s
I
SD
= 63A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.0
V
Reverse Recovery Time
t
rr
-
-
128
ns
Reverse Recovered Charge
Q
RR
-
-
520
nC
HUFA76645P3, HUFA76645S3S
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