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參數(shù)資料
| 型號： | HUFA76429P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 47 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 229K |
| 代理商： | HUFA76429P3 |
2001 Fairchild Semiconductor Corporation
HUFA76429D3, HUFA76429D3S Rev. B
HUFA76429D3, HUFA76429D3S
20A, 60V, 0.027 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
Packaging
JEDEC TO-251AA
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.023
- r
DS(ON)
= 0.027
Simulation Models
- Temperature Compensated PSPICE and SABER
Electriecal Models
- Spice and SABER Thermal Impedance Models
- www.fairchild.com
,
,
V
V
GS
=
=
10V
5V
GS
Peak Current vs Pulse Width Curve
UIS Rating Curve
Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SDRAIN
HUFA76429D3
GATE
SOURCE
DRAIN
(FLANGE)
HUFA76429D3S
D
G
S
PART NUMBER
PACKAGE
BRAND
HUFA76429D3
TO-251AA
76429D
HUFA76429D3S
TO-252AA
76429D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76429D3ST.
HUFA76429D3, HUFA76429D3S
60
60
±
16
UNITS
V
V
V
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (T
C
= 25
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (T
C
= 25
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (T
C
= 100
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (T
C
= 100
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
1. T
J
= 25
C to 150
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DSS
DGR
GS
o
o
D
D
D
D
o
o
DM
20
20
20
20
Figure 4
A
A
A
A
Figures 6, 17, 18
110
0.74
-55 to 175
D
o
W
W/
o
C
J
, T
STG
o
C
L
pkg
300
260
o
o
C
C
o
o
Data Sheet
December 2001
相關PDF資料 |
PDF描述 |
|---|---|
| HUFA76429D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-252AA |
| HUFA76432P3 | 30V N-Channel PowerTrench MOSFET |
| HUFA76432S3S | 30V N-Channel PowerTrench MOSFET |
| HUFA76437P3 | 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUFA76437S3S | 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA76429P3_Q | 功能描述:MOSFET 20a 60V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76429S3S | 功能描述:MOSFET 20a 60V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76429S3ST | 功能描述:MOSFET 20a 60V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76432P3 | 功能描述:MOSFET Logic Level UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76432S3S | 功能描述:MOSFET Logic Level UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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