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參數(shù)資料
| 型號： | HUFA75329S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 49 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 311K |
| 代理商： | HUFA75329S3S |
2001 Fairchild Semiconductor Corporation
HUFA75329D3, HUFA75329D3S Rev. A
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
100
1000
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
100
500
10
100
1
1
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
100
μ
s
10ms
1ms
V
DSS(MAX)
= 55V
LIMITED BY r
DS(ON)
AREA MAY BE
1
100
100
0.01
200
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.1
10
10
0
2
3
5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 20V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 5V
0
20
40
100
4
1
80
60
V
GS
= 6V
0
3.0
4.5
6.0
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
20
40
I
D
,
25
o
C
V
DD
= 15V
100
60
80
-55
o
C
175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
HUFA75329D3, HUFA75329D3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUFA75329D3T | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-251AA |
| HUFA75329G3 | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs |
| HUFA75329D3 | 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs |
| HUFA75329D3S | 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs |
| HUFA75329P3 | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA75329S3ST | 功能描述:MOSFET 55V 49a 0.024 Ohms Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75332G3 | 功能描述:MOSFET 55V 60a 0.019 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75332G3_Q | 功能描述:MOSFET 55V 60a 0.019 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75332P3 | 功能描述:MOSFET 55V 60a 0.019 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA75332S3S | 功能描述:MOSFET 55V 60a 0.019 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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