參數(shù)資料
型號: HUF76645P3
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述: 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 5/10頁
文件大?。?/td> 218K
代理商: HUF76645P3
2001 Fairchild Semiconductor Corporation
HUF76645P3, HUF76645S3S Rev. B
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO
SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
0.4
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
100
70
1000
10000
0.1
1
10
100
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
2
4
6
8
10
0
30
60
90
120
150
0
V
G
,
V
DD
= 50V
Q
g
, GATE CHARGE (nC)
I
D
= 75A
I
D
= 50A
I
D
= 20A
WAVEFORMS IN
DESCENDING ORDER:
200
400
600
800
1000
1200
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 50V, I
D
= 62A
t
r
t
f
t
d(ON)
t
d(OFF)
200
400
600
800
1000
1200
0
10
20
30
40
50
0
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 50V, I
D
= 75A
t
d(OFF)
t
r
t
d(ON)
t
f
HUF76645P3, HUF76645S3S
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