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參數(shù)資料
| 型號： | HUF76639S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 51 A, 100 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 218K |
| 代理商： | HUF76639S3S |
2001 Fairchild Semiconductor Corporation
HUF76639P3, HUF76639S3S Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED
DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
1
10
100
300
1
300
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
0.01
0.1
1
10
100
10
100
1
500
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
25
50
75
100
1.5
2.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.5
3.0
3.5
4.0
0
I
D
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
25
50
75
100
0
1
2
3
4
5
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
25
30
35
40
2
4
6
8
10
20
I
D
= 15A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 51A
r
D
,
O
)
I
D
= 35A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
0.5
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 51A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
HUF76639P3, HUF76639S3S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76639S3ST | 功能描述:MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76639S3ST_ SB82190 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76639S3ST_F085 | 功能描述:MOSFET 50A, 100V, 0.026 Ohm N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76639S3ST_R4882 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76639S3ST_SB82251 | 制造商:Fairchild Semiconductor Corporation 功能描述:FSCHUF76639S3ST_SB82251 50A,100V, 0.027 |
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