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參數(shù)資料
| 型號： | HUF76639P3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C |
| 中文描述： | 51 A, 100 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 218K |
| 代理商： | HUF76639P3 |
2001 Fairchild Semiconductor Corporation
HUF76639P3, HUF76639S3S Rev. B
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
10
20
30
40
50
60
25
50
75
100
125
150
175
0
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
100
1000
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
50
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 10V
V
GS
= 5V
HUF76639P3, HUF76639S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76639S3S | 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76639S3S | 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76645P3 | 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76645P3 | 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76645S3S | 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76639P3_Q | 功能描述:MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76639P3T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 51A I(D) | TO-220AB |
| HUF76639S3S | 功能描述:MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76639S3ST | 功能描述:MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76639S3ST_ SB82190 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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