參數(shù)資料
型號(hào): HUF76445P3
廠商: INTERSIL CORP
元件分類(lèi): 功率晶體管
英文描述: 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(75A, 60V, 0.0075Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
中文描述: 75 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 7/9頁(yè)
文件大?。?/td> 332K
代理商: HUF76445P3
7
PSPICE Electrical Model
.SUBCKT HUF76445 2 1 3 ;
rev 23 April1999
CA 12 8 6.50e-9
CB 15 14 6.50e-9
CIN 6 8 4.71e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 66.30
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.05e-9
LSOURCE 3 7 2.64e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.90e-3
RGATE 9 20 0.87
RLDRAIN 2 5 10
RLGATE 1 9 50.5
RLSOURCE 3 7 26.4
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3.0e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*453),3))}
.MODEL DBODYMOD D (IS = 4.45e-12 RS = 2.08e-3 TRS1 = 1.75e-3 TRS2 = 1.03e-6 CJO = 7.22e-9 TT = 7.21e-8 M = 0.60)
.MODEL DBREAKMOD D (RS = 1.23e-1 TRS1 = 0 TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 4.13e-9 IS = 1e-30 Vj = 1.0 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 1.90 KP = 5.0 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.87)
.MODEL MSTROMOD NMOS (VTO = 2.31 KP = 275 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.65 KP = 0.12 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.7 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.16e-3 TC2 = 1.17e-7)
.MODEL RDRAINMOD RES (TC1 = 1.48e-2 TC2 = 2.93e-5)
.MODEL RSLCMOD RES (TC1 = 1.53e-3 TC2 = 0)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.87e-3 TC2 = -1.02e-5)
.MODEL RVTEMPMOD RES (TC1 = -1.42e-3 TC2 = 9.21e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.7 VOFF= -2.7)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.7 VOFF= -5.7)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -1.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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