參數(shù)資料
型號(hào)： HUF76437S3S
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： Dual Differential Drivers and Receivers With +/-15-kV IEC ESD Protection 16-SO -40 to 85
中文描述： 71 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 4/10頁
文件大?。?/td> 217K
代理商： HUF76437S3S
2001 Fairchild Semiconductor Corporation
HUF76437P3, HUF76437S3S Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
1
10
100
1
500
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
100
0.01
0.1
1
10
10
400
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
30
60
90
120
2.0
2.5
3.0
3.5
4.0
5.0
0
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
4.5
30
60
90
120
0
1
2
3
4
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 4V
V
GS
= 3.5V
15
20
25
2
4
6
8
10
I
D
= 21A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 64A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
10
I
D
= 42A
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
0.5
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 71A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
HUF76437P3, HUF76437S3S
相關(guān)PDF資料
PDF描述
HUF76437S3S Dual Differential Drivers and Receivers With +/-15-kV IEC ESD Protection 16-SO -40 to 85
HUF76439P3 Dual Differential Drivers and Receivers With +/-15-kV IEC ESD Protection 16-TSSOP -40 to 85
HUF76439S3S 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76445P3 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(75A, 60V, 0.0075Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
HUF76445S3S 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(75A, 60V, 0.0075Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76437S3ST 功能描述:MOSFET 64a 60V 0.017 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76439P3 功能描述:MOSFET 71a 60V 0.014Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76439S3S 功能描述:MOSFET 71a 60V 0.014Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76439S3ST 功能描述:MOSFET 71a 60V 0.014Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76443P3 功能描述:MOSFET 75a 60V 0.0095Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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