參數(shù)資料
型號： HUF76423P3T
廠商： Intersil Corporation
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 36A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 36A條（丁）|對263AB
文件頁數(shù)： 2/10頁
文件大?。?/td> 199K
代理商： HUF76423P3T
2001 Fairchild Semiconductor Corporation
HUF76423D3, HUF76423D3S Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
I
D
= 250
μ
A, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
16V
60
-
-
V
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
I
D
= 20A, V
GS
= 10V (Figures 9, 10)
I
D
= 20A, V
GS
= 5V (Figure 9)
I
D
= 20A, V
GS
= 4.5V (Figure 9)
1
-
3
V
Drain to Source On Resistance
-
0.027
0.032
-
0.031
0.037
-
0.033
0.040
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
TO-251 and TO-252
-
-
1.76
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
-
-
100
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 20A
V
GS
=
4.5V, R
GS
= 10
(Figures 15, 21, 22)
-
-
240
ns
Turn-On Delay Time
-
12
-
ns
Rise Time
-
145
-
ns
Turn-Off Delay Time
-
27
-
ns
Fall Time
-
50
-
ns
Turn-Off Time
-
-
120
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
= 20A
V
GS
=
10V,
R
GS
= 10
(Figures 16, 21, 22)
-
-
65
ns
Turn-On Delay Time
-
7
-
ns
Rise Time
-
35
-
ns
Turn-Off Delay Time
-
52
-
ns
Fall Time
-
50
-
ns
Turn-Off Time
-
-
155
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V,
I
D
= 20A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
28
34
nC
Gate Charge at 5V
-
16
20
nC
Threshold Gate Charge
-
1.2
1.5
nC
Gate to Source Gate Charge
-
3.5
-
nC
Gate to Drain “Miller” Charge
-
7
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
1060
-
pF
Output Capacitance
-
315
-
pF
Reverse Transfer Capacitance
-
65
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 20A
I
SD
= 10A
I
SD
= 20A, dI
SD
/dt = 100A/
μ
s
I
SD
= 20A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.0
V
Reverse Recovery Time
t
rr
-
-
90
ns
Reverse Recovered Charge
Q
RR
-
-
225
nC
HUF76423D3, HUF76423D3S
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