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參數(shù)資料
| 型號(hào)： | HUF76423P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Dual Differential Drivers and Receivers With +/-15-kV IEC ESD Protection 16-TSSOP -40 to 85 |
| 中文描述： | 35 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 199K |
| 代理商： | HUF76423P3 |
2001 Fairchild Semiconductor Corporation
HUF76423D3, HUF76423D3S Rev. B
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
1
10
100
1
300
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
10
0.01
0.1
1
100
1
200
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
100
10
10
20
30
40
60
2.0
2.5
3.0
3.5
4.0
5.0
0
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
4.5
50
10
20
30
40
60
0
1
2
3
4
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 4V
50
30
40
50
2
4
6
8
10
I
D
= 10A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 20A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
20
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
0.5
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 20A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
HUF76423D3, HUF76423D3S
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