參數(shù)資料
型號： HUF76419D3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 20 A, 60 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 8/9頁
文件大小： 332K
代理商： HUF76419D3
4-8
HUF76419D3, HUF76419D3S
SABER Electrical Model
REV 8 July 1999
template huf76419d3 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 8.51e-13, cjo = 1.06e-9, tt = 4.90e-8, m = 0.50)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 7.42e-10, is = 1e-30, m = 0.85 )
m..model mmedmod = (type=_n, vto = 1.98, kp = 2.10, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 2.33, kp = 50, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.75, kp = 0.08, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5.5, voff = -3.0)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -3.0, voff = -5.5)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.2, voff = 0.1)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.1, voff = -0.2)
c.ca n12 n8 = 1.2e-9
c.cb n15 n14 = 1.2e-9
c.cin n6 n8 = 8.49e-10
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1.0e-9
l.lgate n1 n9 = 2.51e-9
l.lsource n3 n7 = 3.57e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 1.14e-3, tc2 = 1.02e-9
res.rdbody n71 n5 = 1.03e-2, tc1 = 1.08e-3, tc2 = 9.91e-7
res.rdbreak n72 n5 = 2.39e-1, tc1 = 1.23e-4, tc2 = 1.11e-6
res.rdrain n50 n16 = 1.12e-2, tc1 = 1.19e-2, tc2 = 3.22e-5
res.rgate n9 n20 = 3.12
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 25.1
res.rlsource n3 n7 = 35.7
res.rslc1 n5 n51 = 1e-6, tc1 = 9.91e-4, tc2 =3.17e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1.60e-2, tc1 = 1e-3, tc2 =0
res.rvtemp n18 n19 = 1, tc1 = -1.45e-3, tc2 = 0
res.rvthres n22 n8 = 1, tc1 = -2.34e-3, tc2 = -5.33e-6
spe.ebreak n11 n7 n17 n18 = 68.35
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/98))** 3))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
RDBODY
RDBREAK
72
71
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76419D3_Q 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76419D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76419D3ST 功能描述:MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76419D3ST_R4921 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76419D3STR4921 制造商:Rochester Electronics LLC 功能描述:- Bulk
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