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參數(shù)資料
| 型號： | HUF76131SK8T |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO |
| 中文描述： | 10 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 197K |
| 代理商： | HUF76131SK8T |
1
TM
HUF76131SK8
10A, 30V, 0.013 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76131.
Features
Logic Level Gate Drive
10A, 30V
Ultra Low On-Resistance, r
DS(ON)
= 0.013
Temperature Compensating PSPICE
Model
Thermal Impedance SPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76131SK8
MS-012AA
76131SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76131SK8T.
SOURCE(2)
DRAIN(8)
SOURCE(1)
DRAIN(7)
DRAIN(6)
DRAIN(5)
SOURCE(3)
GATE(4)
BRANDING DASH
1
2
3
4
5
Data Sheet
June 2000
File Number
4396.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a registered trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76131SK8 | 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76143S3S | XTAL MTL SMT HC49/USM |
| HUF76143P3 | 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76143S3S | 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76143P3 | 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76131SK8T_NB82084 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76132P3 | 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76132S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF76132S3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76132S3ST | 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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