參數(shù)資料
型號： HUF76129P3
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(56A, 30V, 0.016 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
中文描述： 56 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 4/10頁
文件大?。?/td> 108K
代理商： HUF76129P3
4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE:
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
Refer to Intersil Application Notes AN9321 and AN9322.
Typical Performance Curves
(Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
2
0.1
1
10
-2
Z
θ
J
,
T
0.01
10
-4
10
-3
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
=
I
25
150 - T
C
125
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
D
,
2000
50
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, PULSE WIDTH (s)
100
V
GS
= 5V
1000
T
J
= MAX RATED
T
C
= 25
o
C
100
μ
s
10ms
1ms
BV
DSS MAX
= 30V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
100
1000
10
I
D
,
10
1
10
100
100
0.01
1000
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.1
10
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
HUF76129P3, HUF76129S3S
相關(guān)PDF資料
PDF描述
HUF76129D3ST TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-252AA
HUF76129D3 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76129D3S 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76129P3 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76129S3S 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76129S3 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3ST 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3STK 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76131SK8 功能描述:MOSFET 10a 30V 0.013 Ohm 1Ch HS Logic Gate RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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