參數(shù)資料
型號： HUF76113T3ST
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(4.7A, 30V, 0.031 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管)
中文描述： 4.7 A, 30 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 6/12頁
文件大?。?/td> 175K
代理商： HUF76113T3ST
6
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0
200
400
600
800
1000
0
5
10
15
20
25
30
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
0
2
4
6
8
10
0
5
10
15
20
V
G
,
V
DD
= 15V
Q
g
, GATE CHARGE (nC)
I
D
= 4.7A
I
D
= 0.5A
WAVEFORMS IN
DESCENDING ORDER:
0
20
40
60
80
100
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 2.6A, R
L
= 5.8
t
r
t
f
t
d(OFF)
t
d(ON)
0
30
60
90
120
150
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 15V, I
D
= 4.7A, R
L
= 3.2
t
r
t
f
t
d(OFF)
t
d(ON)
Test Circuits and Waveforms
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
HUF76113T3ST
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