參數(shù)資料
型號(hào)： HUF75842P3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 43A, 150V, 0.042 Ohm, N-Channel,UltraFET Power MOSFET(43A, 150V, 0.042Ω N溝道2.5V專用功率MOS場(chǎng)效應(yīng)管)
中文描述： 43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 122K
代理商： HUF75842P3
1
TM
File Number
4815.1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright Intersil Corporation 2000
UltraFET is a registered trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation. SABER is a trademark of Analogy Inc.
HUF75842P3, HUF75842S3S
43A, 150V, 0.042 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC TO-220AB
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.042
,
V
GS
=
10V
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
Product reliability information can be found at http://www.mtp.intersil.com/reliability.html
For severe environments, see our Automotive HUFA series.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURDRAIN
HUF75842P3
GATE
SOURCE
DRAIN
(FLANGE)
HUF75842S3S
D
G
S
PART NUMBER
PACKAGE
BRAND
HUF75842P3
TO-220AB
75842P
HUF75842S3S
TO-263AB
75842S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75842S3ST.
HUF75842P3
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
150
V
150
±
20
V
V
43
30
Figure 4
A
A
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
230
1.53
W
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-55 to 175
300
260
o
C
o
C
Data Sheet
December 2000
相關(guān)PDF資料
PDF描述
HUF75842S3S 43A, 150V, 0.042 Ohm, N-Channel,UltraFET Power MOSFET(43A, 150V, 0.042Ω N溝道2.5V專用功率MOS場(chǎng)效應(yīng)管)
HUF75842P3 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET
HUF75842S3S 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET
HUF75852G3 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET
HUF75852G3 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75842S3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75842S3S 功能描述:MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75842S3ST 功能描述:MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75852G3 功能描述:MOSFET 75a 150V 0.016 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75925D3ST 功能描述:MOSFET 200V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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