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參數(shù)資料
| 型號(hào)： | HUF75829D3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 18 A, 150 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大小： | 122K |
| 代理商： | HUF75829D3 |
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
10
300
100
1
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
100
100
μ
s
10ms
1ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
0.001
0.01
0.1
10
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
10
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
15
25
35
2
3
4
6
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
5
5
20
30
10
0
15
25
35
5
20
30
10
0
1
2
3
4
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
=5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 10V
V
GS
= 6V
0.5
1.0
1.5
2.0
3.0
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 18A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
160
2.5
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
160
HUF75829D3, HUF75829D3S
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| HUF75829D3S | 18A, 150V, 0.110 Ohm, N-Channel,UltraFET Power MOSFET(18A, 150V, 0.110Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76105DK8 | 5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
| HUF76112SK8 | 7.5A, 30V, 0.006 Ohm, N-Channel Power MOSFET(7.5A, 30V, 0.006 Ω,N溝道功率MOS場(chǎng)效應(yīng)管) |
| HUF76113DK8 | 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75829D3S | 功能描述:MOSFET 18a 150V N-Ch 0.110 Ohm UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75829D3ST | 功能描述:MOSFET 18a 150V N-Ch 0.110 Ohm UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75831SK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75831SK8T | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75842P3 | 功能描述:MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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