參數(shù)資料
型號: HUF75639S3S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 56 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 5/9頁
文件大?。?/td> 370K
代理商: HUF75639S3S
5
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
O
V
GS
= 10V, I
D
= 56A
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
T
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
0.9
1.2
B
N
T
J
, JUNCTION TEMPERATURE (
o
C)
1.0
1.1
-80
-40
0
40
80
120
160
200
I
D
= 250
μ
A
0
500
1000
1500
2000
2500
3000
0
10
20
30
40
50
60
C
ISS
C
RSS
C
OSS
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
0
2
4
6
8
10
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
V
G
,
I
D
= 56A
I
D
= 37A
I
D
= 18A
WAVEFORMS IN
V
DD
= 50V
HUF75639G3, HUF75639P3, HUF75639S3S
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