- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384445 > HUF75623S3ST (INTERSIL CORP) 22A, 100V, 0.064 Ohm, N-Channel,UltraFET Power MOSFETs(22A, 100V, 0.064 Ω N溝道邏輯電平功率MOS場效應管) PDF資料下載
參數(shù)資料
| 型號： | HUF75623S3ST |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 22A, 100V, 0.064 Ohm, N-Channel,UltraFET Power MOSFETs(22A, 100V, 0.064 Ω N溝道邏輯電平功率MOS場效應管) |
| 中文描述： | 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 10/11頁 |
| 文件大小： | 164K |
| 代理商： | HUF75623S3ST |
10
HUF75623P3, HUF75623S3ST
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
TO-263AB
24mm TAPE AND REEL
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
E
A
1
A
H
1
D
L
b
e
e1
L
2
b
1
L
1
c
TERM. 4
1
3
1
3
L
3
b
2
TERM. 4
0.450
(11.43)
0.350
(8.89)
0.150
(3.81)
0.080 TYP (2.03)
0.062 TYP (1.58)
0.700
(17.78)
J
1
SYMBOL
A
A
1
b
b
1
b
2
c
D
E
e
e
1
H
1
J
1
L
L
1
L
2
L
3
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-263AB outline dated 2-92.
2. L
3
and b
2
dimensions established a minimum mounting surface
for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L
1
is the terminal length for soldering.
7. Positionofleadtobemeasured0.120inches(3.05mm)frombottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 10 dated 5-99.
INCHES
MIN
0.170
0.048
0.030
0.045
0.310
0.018
0.405
0.395
0.100 TYP
0.200 BSC
0.045
0.095
0.175
0.090
0.050
0.315
MILLIMETERS
MIN
4.32
1.22
0.77
1.15
7.88
0.46
10.29
10.04
2.54 TYP
5.08 BSC
1.15
2.42
4.45
2.29
1.27
8.01
NOTES
-
4, 5
4, 5
4, 5
2
4, 5
-
-
7
7
-
-
-
4, 6
3
2
MAX
0.180
0.052
0.034
0.055
-
0.022
0.425
0.405
MAX
4.57
1.32
0.86
1.39
-
0.55
10.79
10.28
0.055
0.105
0.195
0.110
0.070
-
1.39
2.66
4.95
2.79
1.77
-
2.0mm
4.0mm
1.75mm
1.5mm
DIA. HOLE
C
USER DIRECTION OF FEED
16mm
24mm
330mm
100mm
13mm
30.4mm
24.4mm
COVER TAPE
GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION “A” SPECIFICATIONS.
ACCESS HOLE
40mm MIN.
相關PDF資料 |
PDF描述 |
|---|---|
| HUF75631S3ST | 33A, 100V, 0.040 Ohm, N-Channel,UltraFET Power MOSFETs(33A, 100V, 0.040Ω N溝道邏輯電平功率MOS場效應管) |
| HUF75639S3R4851 | Global Limit Switches Series GLS: Wobble - Coil Spring, 2NC 2NO DPDT Snap Action, 20 mm |
| HUF75639S3R4851 | 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET |
| HUF75645P3 | 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs |
| HUF75645P3 | 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75631P3 | 功能描述:MOSFET 33a 100V N-Ch UltraFET 0.40 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631S3S | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631S3ST | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631SK8 | 功能描述:MOSFET USE 512-FDS3682 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75631SK8T | 功能描述:MOSFET 100V NCh PowerMOSFET UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。