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參數(shù)資料
| 型號： | HUF75617D3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-252AA |
| 中文描述： | 16 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 197K |
| 代理商： | HUF75617D3ST |
2001 Fairchild Semiconductor Corporation
HUF75617D3 Rev. B
SABER Electrical Model
REV 24 May 2000
template huf75617d3 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 6.0e-13, rs = 11.0e-3, xti = 4.5, trs1 = 1.1e-3, trs2 = 7.1e-6, cjo = 6.5e-10, tt = 4.1e-8, m = 0.54)
dp..model dbreakmod = (rs = 5.6e-1, trs1 = 8.0e-4, trs2 = 3.0e-6)
dp..model dplcapmod = (cjo = 7.0e-10, isl = 10e-30, m = 0.89, nl = 10)
m..model mmedmod = (type=_n, vto = 3.10, kp = 3, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.64, kp = 42, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.68, kp = 0.02, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5.9, voff = -3.1)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -3.1, voff = -5.9)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.6, voff = 0.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -0.6)
c.ca n12 n8 = 9.9e-10
c.cb n15 n14 = 1.0e-9
c.cin n6 n8 = 5.4e-10
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1.0e-9
l.lgate n1 n9 = 5.24e-9
l.lsource n3 n7 = 4.25e-9
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 1.05e-3, tc2 = -5.0e-7
res.rdrain n50 n16 = 3.9e-2, tc1 = 1.20e-2, tc2 = 3.00e-5
res.rgate n9 n20 = 2.45
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 52.4
res.rlsource n3 n7 = 42.5
res.rslc1 n5 n51 = 1e-6, tc1 = 3.2e-3, tc2 = 1.0e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3.2e-2, tc1 = 1e-3, tc2 = 1e-6
res.rvtemp n18 n19 = 1, tc1 = -2.4e-3, tc2 = 1.8e-6
res.rvthres n22 n8 = 1, tc1 = -2.2e-3, tc2 = -9.0e-6
spe.ebreak n11 n7 n17 n18 = 117.8
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/32))** 3.5))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF75617D3
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| HUF75623S3ST | 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs |
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| HUF75623S3ST | 功能描述:MOSFET 22a 100V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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