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參數(shù)資料
| 型號： | HUF75545P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET |
| 中文描述： | 75 A, 80 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 270K |
| 代理商： | HUF75545P3 |
2002 Fairchild Semiconductor Corporation
HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
40
60
80
50
75
100
125
150
0
25
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
175
0.1
1
2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
10
-5
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
100
2000
50
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
D
,
t, PULSE WIDTH (s)
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 10V
1000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
HUF75545P3, HUF75545S3, HUF75545S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75545P3 | 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75545S3S | 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75545S3 | 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75545S3S | 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75617D3 | 16A, 100V, 0.090 Ohm, N-Channel,UltraFET Power MOSFETs(16A, 100V, 0.090 Ω,N溝道超快功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75545P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| HUF75545P3_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75545P3_Q | 功能描述:MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75545P3_R4932 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75545S3 | 功能描述:MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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