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參數(shù)資料
| 型號： | HUF75345P3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 75 A, 55 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 286K |
| 代理商： | HUF75345P3 |
2005 Fairchild Semiconductor Corporation
HUF75345G3, HUF75345P3, HUF75345S3S Rev. B1
HUF75345G3, HUF75345P3, HUF75345S3S
75A, 55V, 0.007 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75345.
Features
75A, 55V
Simulation Models
- Temperature Compensated PSPICE and SABER
Models
- Thermal Impedance SPICE and SABER Models
Available on the WEB at: www.fairchildsemi.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75345G3
TO-247
75345G
HUF75345P3
TO-220AB
75345P
HUF75345S3S
TO-263AB
75345S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75345S3ST.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
GATE
SDRAIN
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
March 2005
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75345S3S | 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75345P3 | 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75345S3S | 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75345S3ST | 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75545P3 | 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75345P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| HUF75345P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| HUF75345P3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75345P3_NS2552 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75345P3_Q | 功能描述:MOSFET 75a 55V 0.007Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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