- 您現在的位置：買賣IC網 > PDF目錄384445 > HUF75321S3S (INTERSIL CORP) 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs(35A, 55V, 0.034 Ω, N溝道UltraFET功率MOS場效應管) PDF資料下載
參數資料
| 型號： | HUF75321S3S |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs(35A, 55V, 0.034 Ω, N溝道UltraFET功率MOS場效應管) |
| 中文描述： | 35 A, 55 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數： | 5/9頁 |
| 文件大?。?/td> | 130K |
| 代理商： | HUF75321S3S |
5
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 35A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
-40
0
40
80
120
160
200
0.6
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
0.9
1.0
1.1
1.2
-40
0
40
80
120
160
200
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
800
400
00
10
20
30
40
50
C
600
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
200
C
ISS
C
OSS
C
RSS
60
1000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
10
8
6
4
0
V
G
,
V
DD
= 30V
2
15
20
0
Q
g
, GATE CHARGE (nC)
5
10
I
D
= 35A
I
D
= 17.5A
I
D
= 8.75A
WAVEFORMS IN
DESCENDING ORDER:
25
HUF75321P3, HUF75321S3S
相關PDF資料 |
PDF描述 |
|---|---|
| HUF75332G3 | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75332P3 | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75332S3S | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75332P3 | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應管) |
| HUF75332G3 | 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N溝道,UltraFET功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUF75321S3ST | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75329D3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75329D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75329D3S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| HUF75329D3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。