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參數(shù)資料
| 型號(hào)： | HUF75229P3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET |
| 中文描述： | 44 A, 50 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | HUF75229P3 |
4
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
0.001
100
300
0.01
t
AV
, TIME IN AVALANCHE (ms)
0.1
1
10
I
A
,
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
20
40
60
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
80
I
D
,
V
GS
= 6V
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 20V
PULSE DURATION = 250
μ
s
T
C
= 25
o
C
V
GS
= 5V
100
0
3.0
4.5
6.0
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
175
o
C
-55
o
C
25
o
C
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0
20
40
60
80
100
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 250
μ
s, V
GS
= 10V, I
D
= 44A
200
-80
-40
0
40
80
120
160
0.4
0.6
0.8
1.0
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
200
1.2
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
200
HUF75229P3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75229P3 | 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET |
| HUF75307D3 | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75307D3S | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75307P3 | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75307D3 | 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75229P3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75307D3 | 功能描述:MOSFET 15a 55V N-Ch UltraFET 0.099 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75307D3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N I-PAK |
| HUF75307D3S | 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75307D3ST | 功能描述:MOSFET 15a 55V N-Ch UltraFET 0.099 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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