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| 型號： | HTSH5601ETK |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | HITAG S transponder IC |
| 封裝： | HTSFCH4801EV/DH<SOT732-1 (FCP2)|<<http://www.nxp.com/packages/SOT732-1.html<1<Always Pb-free,;HTSFCH5601EV/DH<SOT732-1 (FCP2)|<<http://www.nxp.com/packages/SOT732-1.html& |
| 文件頁數(shù)： | 17/21頁 |
| 文件大小： | 162K |
| 代理商： | HTSH5601ETK |
HTSICH56_48_SDS
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product short data sheet
COMPANY PUBLIC
Rev. 3.0 — 12 October 2011
210330
17 of 21
NXP Semiconductors
HTSICH56; HTSICH48
HITAG S transponder IC
8. Limiting values
[1]
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
[2]
This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static
charge. Nonetheless, it is suggested that conventional precautions should be taken to avoid applying values greater than the rated
maxima
9. Characteristics
[1]
Typical ratings are not guaranteed. Values are at 25
C
.
Measured with Q
coil
= 20, L
coil
= 7.5 mH, optimal tuned to resonance circuit;
V
IN1-IN2
= 2 V (RMS)
[2]
Table 20.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
ESD
electrostatic discharge voltage
Limiting values
[1][2]
Conditions
JEDEC JESD 22-A114-AB
Human Body Model
IN1-IN2
Min
2
Max
-
Unit
kV
I
i(max)
T
j
maximum input current
junction temperature
-
25
20
+85
mA
C
Table 21.
Symbol
f
i
V
I
Characteristics
Parameter
input frequency
input voltage
Conditions
Min
100
Typ
[1]
125
Max
150
Unit
kHz
IN1-IN2
read
write
IN1-IN2
-
-
-
3.5
6.3
-
4.5
7.2
10
V
V
mA
I
I
Interface characteristics
C
i
input current
input capacitance
between IN1-IN2
HTSICxxxxxEW/x7
[2]
199
210
221
pF
Wafer EEPROM characteristics
t
ret
retention time
N
endu(W)
write endurance
T
amb
55
C
10
100000
-
-
year
cycle
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