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參數(shù)資料
| 型號： | HT112 |
| 英文描述： | NPN100V4A30W|Bipolar Transistors |
| 中文描述： | NPN100V4A30W |雙極晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | HT112 |
HI-SINCERITY
MICROELECTRONICS CORP.
HT112
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HT200101
Issued Date : 2000.05.01
Revised Date : 2002.03.28
Page No. : 1/4
HT112
HSMC Product Specification
Description
The HT112 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).................................................................................... 1.5 W
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 30 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 4 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
100
100
-
-
-
-
-
1
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
1
2
2
2.5
2.8
-
-
100
Unit
V
V
mA
mA
mA
V
V
K
Test Conditions
IC=1mA
IC=30mA
VCB=100V
VCE=50V
VEB=5V
IC=2A, IB=8mA
IC=2A, VCE=4V
IC=1A, VCE=4V
IC=2A, VCE=4V
VCB=10V, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
TO-126
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