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參數(shù)資料
| 型號： | HSU227 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Schottky Barrier Diode for High Speed Switching |
| 中文描述： | 硅肖特基二極管高速開關(guān) |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 25K |
| 代理商： | HSU227 |
HSU227
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Repetitive peak reverse
voltage
V
RRM
25
V
Average rectified current
I
o
I
FSM
50
mA
Non-Repetitive peak
forward surge current
*2
200
mA
Junction temperature
Tj
125
°
C
°
C
Storage temperature
Note:
1. 10msec sine wave 1 pulse
Tstg
-55 to +125
Electrical Characteristics (Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R
C
—
0.29
0.35
V
I
F
= 1mA
V
R
= 20V
V
R
= 1V, 1=1MHz
Reverse current
—
0.3
2.0
μ
A
Capacitance
—
2.45
3.0
pF
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