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參數(shù)資料
| 型號(hào)： | HSMS-286E |
| 英文描述： | High frequency detector diode |
| 中文描述： | 高頻二極管檢測(cè)器 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 230K |
| 代理商： | HSMS-286E |
3
Electrical Characteristics
T
A
= 25
°
C
Forward Voltage
V
F
(Volts)
@ I
F
= 20 mA
Typ. Max.
2.1 2.6
2.2 2.6
2.1 2.6
2.2 2.6
1.8 2.6
Reverse Breakdown
V
R
(Volts)
@ I
R
= 100
μ
A
Min.
5
5
5
5
5
Capacitance C
(pF), V
F
= 0,
f = 1 MHz
Typ.
5
7
6
9
18
Thermal
Resistance
R
θ
J-PIN
= (
°
C/W)
Typ.
250
250
250
250
300
Part Number
HSMS-C191
HSMD-C191
HSMY-C191
HSMG-C191
HSMH-C191
Color
HER
Orange
Yellow
Green
AlGaAs
Absolute Maximum Ratings
T
A
= 25
°
C
Parameter
DC Forward Current
[1]
Peak Pulsing Current
[2]
Power Dissipation
Reverse Voltage (I
R
= 100
μ
A)
LED Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
HSMS/HSMD/HSMY/HSMG-C191
20
100
52
5
95
–30 to +85
–40 to +85
See IR soldering profile (Figure 6)
HSMH-C191
25
100
65
5
95
–30 to +85
–40 to +85
Units
mA
mA
mW
V
°
C
°
C
°
C
Notes:
1. Derate linearly as shown in Figure 4.
2. Pulse condition of 1/10 duty and 0.1 msec width.
Optical Characteristics
T
A
= 25
°
C
Luminous
Intensity
I
v
(mcd)
@ 20 mA
[1]
Min. Typ.
2.50 10.0
2.50 8.0
2.50 8.0
4.00 15.0
6.30 17.0
Color,
Dominant
Wavelength
λ
d[2]
(nm)
Typ.
626
604
586
572
639
Viewing
Angle
2
θ
1/2
Degrees
[3]
Typ.
170
170
170
170
170
Peak
Wavelength
λ
peak
(nm)
Typ.
630
605
589
570
660
Part
Number
HSMS-C191
HSMD-C191
HSMY-C191
HSMG-C191
HSMH-C191
Color
HER
Orange
Yellow
Green
AlGaAs
Notes:
1. The luminous intensity I
v
is measured at the peak of the spatial radiation pattern which may not be aligned with the mechanical axis of the lamp
package.
2. The dominant wavelength
λ
d
is derived from the CIE Chromaticity Diagram and represents the perceived color of the device.
3.
θ
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity.
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PDF描述 |
|---|---|
| HSMS-286F | High frequency detector diode |
| HSMS-286K | High frequency detector diode |
| HSMS-286L | High frequency detector diode |
| HSMS-286P | High frequency detector diode |
| HSMS-286R | High frequency detector diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSMS-286E-BLKG | 功能描述:射頻檢測(cè)器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
| HSMS-286E-TR1G | 功能描述:射頻檢測(cè)器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
| HSMS-286E-TR2G | 功能描述:射頻檢測(cè)器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
| HSMS-286F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High frequency detector diode |
| HSMS-286F-BLKG | 功能描述:射頻檢測(cè)器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
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