參數(shù)資料
型號(hào): HSMP-386L-BLK
廠商: AGILENT TECHNOLOGIES INC
元件分類(lèi): 參考電壓二極管
英文描述: 50 V, SILICON, PIN DIODE
封裝: SOT-363, 6 PIN
文件頁(yè)數(shù): 3/9頁(yè)
文件大小: 134K
代理商: HSMP-386L-BLK
3
HSMP-386x Typical Parameters at T
C
= 25
°
C
Part Number
Total Resistance
HSMP-
R
T
(
)
386x
22
Carrier Lifetime
τ
(ns)
Reverse Recovery Time
T
rr
(ns)
80
Total Capacitance
C
T
(pF)
0.20
500
Test Conditions
I
= 1 mA
f = 100 MHz
I
F
= 50 mA
T
R
= 250 mA
V
= 10 V
I
= 20 mA
90% Recovery
V
= 50 V
f = 1 MHz
Typical Performance, T
C
= 25
°
C, each diode
Figure 1. RF Capacitance vs. Reverse
Bias.
0.15
0.30
0.25
0.20
0.35
0
2
6
4
10 12
8
16
14
18 20
T
REVERSE VOLTAGE (V)
1 GHz
100 MHz
1 MHz
120
115
110
105
100
95
90
85
1
10
30
I
F
– FORWARD BIAS CURRENT (mA)
Figure 3. 2nd Harmonic Input
Intercept Point vs. Forward Bias
Current for Switch Diodes.
I
Diode Mounted as a
Series Switch in a
50
Microstrip and
Tested at 123 MHz
FORWARD CURRENT (mA)
Figure 4. Reverse Recovery Time vs.
Forward Current for Various Reverse
Voltages.
T
r
10
100
1000
10
20
30
V
R
= 5V
V
R
= 10V
V
R
= 20V
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
0.01
100
1000
1
10
R
BIAS CURRENT (mA)
10
100
1
0.1
T
A
= +85
°
C
T
A
= +25
°
C
T
A
= –55
°
C
100
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
I
F
V
F
– FORWARD VOLTAGE (mA)
Figure 5. Forward Current vs.
Forward Voltage.
125
°
C 25
°
C –50
°
C
Equivalent Circuit Model
HSMP-386x Chip*
0.12 pF
1.5
R
j
R
s
C
j
R
= 12
I
0.9
I = Forward Bias Current in mA
* See AN1124 for package models
R
T
= 1.5 + R
j
C
T
= C
P
+ C
j
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HSMP-386L-TR1G 功能描述:PIN 二極管 50 VBR 0.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向電壓:200 V 正向連續(xù)電流: 頻率范圍:10 MHz to 6 GHz 端接類(lèi)型:SMD/SMT 封裝 / 箱體:QFN-3 封裝:Reel
HSMP-386L-TR2 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Surface Mount PIN Diodes
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