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參數(shù)資料
| 型號(hào)： | HSM2694 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Epitaxial Planar Diode for Tuner Band Switch(用于調(diào)諧開關(guān)的平面外延PIN二極管) |
| 中文描述： | 硅外延平面二極管調(diào)諧器波段開關(guān)（用于調(diào)諧開關(guān)的平面外延的PIN二極管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 22K |
| 代理商： | HSM2694 |
HSM2693A
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
Pd*
35
V
Power dissipation
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–45 to +125
°C
Operation temperature
Note: Two device total
Topr
–20 to +60
°C
Electrical Characteristics
(Ta = 25°C)
*
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
V
R
I
R
V
F
C
35
—
—
V
I
R
= 10μA
V
R
= 25V
I
F
= 10mA
V
R
= 6V, f = 1MHz
I
F
= 2mA, f = 100MHz
Reverse current
—
—
50
nA
Forward voltage
—
—
1.0
V
Capacitance
—
—
1.2
pF
Forward resistance
Note: Per one device
r
f
—
—
0.9
Forward current I (A)
2.0
1.0
0
F
f = 100MHz
10
0.5
1.5
–4
f
10
–3
10
–2
Fig.1 Forward resistance Vs. Forward current
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