參數(shù)資料
型號: HSM221C
廠商: Hitachi,Ltd.
英文描述: Silicon Epitaxial Planar Diode for High Speed Switching
中文描述: 硅外延平面二極管高速開關
文件頁數(shù): 2/5頁
文件大小: 17K
代理商: HSM221C
HSM221C
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
V
R
I
FM
I
FSM
*
I
O
Tj
85
V
Reverse voltage
80
V
Peak forward current
300
mA
Non-Repetitive peak forward surge current
4
A
Average forward current
100
mA
Junction temperature
125
°
C
°
C
Storage temperature
Note:
Within 1
μ
s forward surge current.
Tstg
–55 to +125
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F1
V
F2
V
F3
I
R
C
0.76
1.0
V
I
F
= 10mA
I
F
= 50mA
I
F
= 100mA
V
R
= 80V
V
R
= 0V, f = 1MHz
I
F
= 10mA, V
R
= 6V, R
L
= 50
0.88
1.0
0.97
1.2
Reverse current
0.1
μ
A
Capacitance
0.5
2.0
pF
Reverse recovery time
t
rr
3.0
ns
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