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參數(shù)資料
| 型號： | HSK120 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Epitaxial Planar Diode for High Speed Switching |
| 中文描述： | 硅外延平面二極管高速開關(guān) |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 26K |
| 代理商： | HSK120 |
HSK120
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
V
R
I
FM
I
FSM
70
V
Reverse voltage
60
V
Peak forward current
450
mA
Non-Repetitive peak
forward surge current
*1
4
A
Average rectified current
I
O
Tj
150
mA
Junction temperature
175
°
C
°
C
Storage temperature
Note
1. Within 1
μ
s forward surge current..
Tstg
-65 to +175
Electrical Characteristics (Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
V
R
I
R
C
—
—
0.8
V
I
F
= 10 mA
I
R
= 5
μ
A
V
R
= 60V
V
R
= 0V, f = 1 MHz
I
F
= 10 mA, V
R
= 6V, R
L
= 50
, I
rr
= 0.1I
R
Reverse voltage
70
—
—
V
Reverse current
—
—
0.1
μ
A
Capacitance
—
—
3.0
pF
Reverse recovery
time
t
rr
—
—
3.0
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HSK120(TR-S-E) | 制造商:Renesas Electronics Corporation 功能描述: |
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| HSK-125 | 制造商:Cooper Bussmann 功能描述: |
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