參數(shù)資料
型號(hào): HSCH-910
英文描述: GaAs Beam Lead Schottky Barrier Diodes (48K in pdf)
中文描述: 砷化鎵梁式引線肖特基二極管(48,000 PDF格式)
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 127K
代理商: HSCH-910
3-66
Minimum
Breakdown
Voltage
V
BR
(V)
4
Maximum
Dynamic
Resistance
R
D
(
)
12
16
20
12
16
20
I
F
= 5 mA
Maximum
Total
Capacitance
C
T
(pF)
0.25
0.15
0.10
0.25
0.15
0.10
V
= 0 V
f = 1 MHz
Maximum
Forward
Voltage
V
F
(mV)
500
Maximum
Leakage
Current
I
R
(nA)
100
Part
Number
HSCH-
5316
5312
5310
5336
5332
5330
Test
Conditions
Batch*
Matched
HSCH-
5317
Barrier
Medium
Low
4
375
400
5333
5331
V
15 mV
@ 5 mA
I
R
10
μ
A
I
F
= 1 mA
V
R
= 1 V
*Minimum batch size 20 units.
Table IB. Electrical Specifications for DC Tested Diodes at T
A
= 25
°
C
Typical Detector Characteristics at T
A
= 25
°
C
Medium Barrier and Low Barrier (DC Bias)
Parameter
Symbol
Typical Value
Units
Test Conditions
20
μ
A Bias, R
L
= 100 K
Video Bandwidth = 2 MHz
f = 10 GHz
Tangential Sensitivity
TSS
-54
dBm
Voltage Sensitivity
γ
6.6
mV/
μ
W
Video Resistance
R
V
1400
Low Barrier (Zero Bias)
Parameter
Tangential Sensitivity
Symbol
TSS
Typical Value
-44
Units
dBm
Test Conditions
Zero Bias, R
L
= 10 M
Video Bandwidth = 2 MHz
f = 10 GHz
Voltage Sensitivity
γ
10
mV/
μ
W
Video Resistance
R
V
1.8
M
SPICE Parameters
HSCH-5316
HSCH-5312
HSCH-5314
HSCH-5330
Parameter Units HSCH-5318
HSCH-5310 HSCH-5340
HSCH-5332
HSCH-5336
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
V
pF
eV
A
A
5
5
5
5
5
5
0.2
0.69
10E-5
3 x 10E-10
1.08
5
0.65
2
0.5
0.13
0.69
10E-5
3 x 10E-10
1.08
9
0.65
2
0.5
0.09
0.69
10E-5
3 x 10E-10
1.08
13
0.65
2
0.5
0.09
0.69
10E-5
4 x 10E-10
1.08
13
0.5
2
0.5
0.13
0.69
10E-5
4 x 10E-8
1.08
9
0.5
2
0.5
0.20
0.69
10E-5
4 x 10E-8
1.08
6
0.5
2
0.5
V
相關(guān)PDF資料
PDF描述
HSCH-9101 GaAs Beam Lead Schottky Barrier Diodes (48K in pdf)
HSCH-9161 Zero Bias Beamlead Detector Diode (82K in pdf)
HSCH-9201 GaAs Beam Lead Schottky Barrier Diodes (48K in pdf)
HSCH-9251 Beamlead GaAs Schottky barrier diodes
HSCH-9301 Beamlead GaAs Schottky barrier diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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