參數(shù)資料
型號(hào)： HSCH-5531
英文描述： Beam Lead Silicon Schottky Diodes
中文描述： 梁鉛硅肖特基二極管
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 127K
代理商： HSCH-5531
3-65
Applications
The beam lead diode is ideally
suited for use in stripline or
microstrip circuits. Its small
physical size and uniform dimen-
sions give it low parasitics and
repeatable RF characteristics
through K-band.
The basic medium barrier devices
in this family are DC tested
HSCH-5310, -5312, and -5316. A
batch matched version is available
as the HSCH-5317. Equivalent low
barrier devices are HSCH-5330,
-5332, and -5336. Batch matched
Assembly Techniques
Thermocompression bonding is
recommended. Welding or
conductive epoxy may also be
used. For additional information
see Application Note 979, “The
Handling and Bonding of Beam
Lead Devices Made Easy,” or
Application Note 993, “Beam Lead
Device Bonding to Soft
Substrates.”
I
Min.
Break-
down
Voltage
V
BR
(V)
4
Max.
Dynamic
Resis-
tance
R
D
(
)
12
Max.
Total
Capaci-
tance
C
T
(pF)
0.25
Max.
Noise
Figure
NF (dB)
Impedance
Z
IF
(
)
Max.
Forward
Voltage
V
F
(mV)
500
Max.
Leakage
Current
I
R
(nA)
100
Part
Number
HSCH-
Batch*
Matched
HSCH-
Max.
SWR
Barrier
Min.
Max.
5318
5319
Medium
6.2 at
9.375 GHz
200
400
1.5:1
5314
5315
7.2 at
16 GHz
16
0.15
5340
5341
Low
7.5 at
26 GHz
DC Load Resistance - 0
LO Power = 1 mW
I
F
= 30 MHz, 1.5 dB NF
150
350
1.5:1
4
20
0.10
375
400
Test
NF
≤
0.3 dB
Z
IF
≤
25
I
R
≤
10
μ
A
I
F
= 5 mA
V
= 0 V
f = 1 MHz
I
F
= 1 mA
V
R
= 1 V
Conditions
*Minimum batch size 20 units.
Note:
1. C
T
= C
J
+ 0.02 pF (fringing cap).
Table IA. Electrical Specifications for RF Tested Diodes at T
A
= 25
°
C
versions are available as
HSCH-5331 and -5333.
For applications requiring
guaranteed RF-tested perform-
ance up to 26 GHz, the HSCH-5340
is selected with batch match units
available as the HSCH-5341. The
HSCH-5318 is selected for 6.2 dB
maximum noise figure at
9.375GHz; with RF batch match
units available as the HSCH-5319.
The HSCH-5314 is rated at 7.2 dB
maximum noise figure at 16 GHz
with RF batch match units
available as the HSCH-5315.
相關(guān)PDF資料
PDF描述
HSCH-910 GaAs Beam Lead Schottky Barrier Diodes (48K in pdf)
HSCH-9101 GaAs Beam Lead Schottky Barrier Diodes (48K in pdf)
HSCH-9161 Zero Bias Beamlead Detector Diode (82K in pdf)
HSCH-9201 GaAs Beam Lead Schottky Barrier Diodes (48K in pdf)
HSCH-9251 Beamlead GaAs Schottky barrier diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HSCH-910 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GaAs Beam Lead Schottky Barrier Diodes (48K in pdf)
HSCH-9101 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GaAs Beam Lead Schottky Barrier Diodes (48K in pdf)
HSCH-9102 制造商:AGILENT 制造商全稱:AGILENT 功能描述:GaAs Beam Lead Schottky Barrier Diodes
HSCH-9151 制造商:AGILENT 制造商全稱:AGILENT 功能描述:GaAs Beam Lead Schottky Barrier Diodes
HSCH-9161 制造商:Agilent Technologies 功能描述:RF DETECTOR SCHOTTKY 10V 2PIN - Gel-pak, waffle pack, wafer, diced wafer on film 制造商:Agilent Technologies 功能描述:0-BIAS BEAM-LEAD DETECTOR 制造商:Avago Technologies 功能描述:SCHOTTKY BEAMLEAD DIODE - Gel-pak, waffle pack, wafer, diced wafer on film
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