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參數(shù)資料
| 型號(hào)： | HSCH-5314 |
| 英文描述： | Beam Lead Silicon Schottky Diodes |
| 中文描述： | 梁鉛硅肖特基二極管 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 127K |
| 代理商： | HSCH-5314 |
3-67
Typical Parameters
100
10
1
0.1
0.01
FORWARD VOLTAGE (V)
Figure 1. Typical Forward
Characteristics for Medium Barrier
Beam Lead Diodes. HSCH-5310 Series.
0
0.2
0.4
0.6
1.0
0.8
+125
°
C
+25
°
C
-55
°
C
100
10
1
0.1
0.01
FORWARD VOLTAGE (V)
Figure 2. Typical Forward
Characteristics for Low Barrier Beam
Lead Diodes. HSCH-5330, -5340 Series.
0
0.2
0.4
0.6
0.8
+125
°
C
+25
°
C
-55
°
C
Figure 3. Typical Noise Figure vs.
Frequency.
N
0
5.0
FREQUENCY (GHz)
16
20
7.5
6.0
5.5
4
2
8
26
6.5
7.0
28
12
24
0.15 pF
0.1 pF
0.25 pF
Figure 5. Typical Admittance Characteristics with External
Bias. HSCH-5340 and -5341.
Figure 4. Typical Admittance Characteristics with 1 mA Self
Bias. HSCH-5340 and -5341.
0.2
05
1
20
30
50
2
3
5
0.2
05
0
0
1
2
3
5
1
100
1
10
2
18
26 GHz
0.2
05
1
1
20
30
50
2
3
5
0.2
05
0
1
2
3
5
1
100
1
10
2
26 GHz
150
μ
A
50
μ
A
20
μ
A
0
20
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSCH-5316 | Beam Lead Silicon Schottky Diodes |
| HSCH-5318 | Beam Lead Silicon Schottky Diodes |
| HSCH-5330 | Beam Lead Silicon Schottky Diodes |
| HSCH-5331 | Beam Lead Silicon Schottky Diodes |
| HSCH-5332 | Beam Lead Silicon Schottky Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSCH5315 | 制造商:HP 功能描述:TRANSISTOR, 20 batch matched |
| HSCH-5315 | 制造商:HP 功能描述:TRANSISTOR, 20 batch matched |
| HSCH-5316 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz) |
| HSCH-5317 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz) |
| HSCH-5318 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz) |
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