- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370687 > HSB83J (Hitachi,Ltd.) Silicon Epitaxial Planar Diode for High Voltage Switching(用于高電壓開關(guān)的平面外延PIN二極管) PDF資料下載
參數(shù)資料
| 型號(hào)： | HSB83J |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Epitaxial Planar Diode for High Voltage Switching(用于高電壓開關(guān)的平面外延PIN二極管) |
| 中文描述： | 硅二極管外延平面開關(guān)（用于高電壓開關(guān)的平面外延的PIN二極管高電壓） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 26K |
| 代理商： | HSB83J |
HSB83J
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
V
R
I
FM
I
FSM
300
V
Reverse voltage
250
V
Peak forward current
300
mA
Non-Repetitive peak
forward surge current
*1
2
A
Average rectified current
I
O
Tj
100
mA
Junction temperature
125
°C
Storage temperature
Note:
1. Value at duration of 10msec.
Tstg
–55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R1
I
R2
C
—
—
1.2
V
I
F
= 100 mA
V
R
= 250V
V
R
= 300V
V
R
= 0V, f = 1 MHz
I
F
= I
R
= 30 mA, I
rr
= 3mA, R
L
= 100
Reverse current
—
—
0.2
μA
—
—
100
Capacitance
—
—
3.0
pF
Reverse recovery
time
t
rr
—
—
100
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSB83 | Silicon Epitaxial Planar Diode for High Voltage Switching |
| HSB83YP | Silicon Epitaxial Planar Diode for High Voltage Switching |
| HSB88AS | Silicon Schottky Barrier Diode for High Speed Switching |
| HSB88WA | |
| HSB88WK | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSB83TL-E | 制造商:Renesas Electronics 功能描述:Cut Tape |
| HSB83YP | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Diode for High Voltage Switching |
| HSB83YPTR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| HSB8404 | 制造商:Thomas & Betts 功能描述:RECPT WT 30A AC 3W |
| HSB8404R | 制造商:Thomas & Betts 功能描述:RCPT WT 30A REV SERV |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。