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參數(shù)資料
| 型號(hào)： | HSB276AYP |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | HSB276AYP |
HSB276AYP
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
V
R
I
O
*
Tj
5
V
Rreverse voltage
3
V
Average rectified current
30
mA
Junction temperature
125
°
C
°
C
Storage temperature
Note
:
Per one device
Tstg
55 to +125
Electrical Characteristics
(Ta = 25
°
C)
*
2
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
V
R
I
R
I
F
C
3
V
I
R
= 1 mA
V
R
= 0.5 V
V
F
= 0.5 V
V
R
= 0.5 V, f = 1 MHz
V
R
= 0.5 V, f = 1 MHz
C = 200 pF , R = 0
Both forward and reverse direction 1
pulse.
Reverse current
50
μ
A
Forward current
35
mA
Capacitance
0.85
pF
Capacitance deviation
C
0.10
pF
ESD-Capability *
1
30
V
Notes
:
1. Failure criterion ; I
R
>
100
μ
A at V
R
= 0.5 V
2. Per one device
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