參數(shù)資料
型號: HRB0103A
廠商: Hitachi,Ltd.
英文描述: Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying(用于低壓高速開關(guān)和整流的肖特基勢壘二極管)
中文描述: 硅肖特基二極管低電壓高速開關(guān),整流(用于低壓高速開關(guān)和整流的肖特基勢壘二極管)
文件頁數(shù): 3/5頁
文件大小: 37K
代理商: HRB0103A
HRB0103A
3
Main Characteristic
0
10
20
30
40
50
10
-7
10
-5
10
-6
10
-2
10
-3
10
-4
0
0.1
0.2
0.3
0.4
0.5
10
-4
10
-6
10
-5
10
-8
10
10
-7
-9
10
-3
10
-2
0
Average rectified current
@@
Io
@
(
mA)
Fig3. F
orward power dissipation
Vs. Average rectified current
0.04
0.02
0.06
0.05
0.03
0.01
0
120
40
80
20
60
100
0.07
D=1/6
Unit: mm
20hx15wx0.8t
0
1.5
2
3
0.08
sin wave
D=1/3
D=1/2
DC
tp
T
0
Io
D=
tp
T
0
Fig4.
Vs. Peak reverse voltage
0.04
0.02
0.06
0.05
0.03
0.01
0
30
10
20
5
15
25
0.07
D=1/2
Unit: mm
20hx15wx0.8t
0
1.5
2
3
0.08
sin wave
D=5/6
D=2/3
DC
tp
T
VR
D=
tp
T
0
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
Forward voltage V (V)
F
F
Pulse test
Reverse voltage V (V)
R
R
Pulse test
F
Peak reverse voltage
@@
VRM
@
(
V)
R
相關(guān)PDF資料
PDF描述
HRB0103B Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying(用于低壓高速開關(guān)和整流的肖特基勢壘二極管)
HRB0502A Silicon Schottky Barrier Diode for Rectifying(用于整流的肖特基勢壘二極管)
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