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2-94
Maximum Ratings
Junction Operating and Storage
Temperature Range ...................................................... -65
°
C to +150
°
C
T
A
= 25
°
C
P
D
Power Dissipation ................................................................250 mW
(Measured in an infinite heat sink derated linearly
to zero at 150
°
C.)
Operation in excess of any one of these conditions may result in
permanent damage to this device.
Electrical Specifications at T
A
= 25
°
C
Typical Parameters
Chip for
Epoxy or
Eutectic
Die Attach
HPND-
0001
0002
Test
Conditions
Nearest
Equivalent
Surface Mount Axial Lead
Part No.
HSMP-
3800
3810
Nearest
Equivalent
Minimum
Breakdown
Voltage
V
BR
(V)
100
100
V
= V
Measure
I
R
≤
10 mA
Typical
Carrier
Lifetime
τ
(ns)
1800
1500
I
F
= 50 mA
I
R
= 250 mA
*I
F
= 10 mA
*I
R
= 6 mA
Typical Reverse
Recovery
Time
t
rr
(ns)
500
300
I
F
= 20 mA
V
= 10 V
90% Recovery
Maximum
Capacitance
C
j
(pF)
0.20
0.20
V
R
= 50 V
*V
= 20 V
f = 1.0 MHz
Series
Resistance
R
S
(
)
2.0
3.5
I
F
= 100 mA
*I
F
= 10 mA
Part No.
5082-
3080
3081
Assembly and Handling
Procedures for PIN Chips
1. Storage
Devices should be stored in a dry
nitrogen purged dessicator or
equivalent.
2. Cleaning
If required, surface contamination
may be removed with electronic
grade solvents. Typical solvents,
such as freon (T.F. or T.M.C.),
acetone, deionized water, and
methanol, or their locally ap-
proved equivalents, can be used
singularly or in combinations.
Typical cleaning times per solvent
are one to three minutes. DI water
and methanol should be used (in
that order) in the final cleans.
Final drying can be accomplished
by placing the cleaned dice on
clean filter paper and drying with
an infrared lamp for 5-10 minutes.
Acids such as hydrofluoric (HF),
nitric (HNO
3
), and hydrochloric
(HCl) should not be used.
The effects of cleaning methods/
solutions should be verified on
small samples prior to submitting
the entire lot.
Following cleaning, dice should
be either used in assembly
(typically within a few hours) or
stored in clean containers in a
reducing atmosphere or a vacuum
chamber.
3. Die Attach
a. Eutectic
Eutectic die attach can be accom-
plished by “scrubbing” the die
with/without a preform on the
header to combine with the
silicon in the die. Temperature is
approximately 400
°
C, with
heating times of 5-10 seconds.
(Note–times and temperature
utilized may vary depending on
the type, composition, and heat
capacity of the header or sub-
strate used.) This method is
recommended for the HPND-000X
series.
b. Epoxy
For epoxy die-attach, conductive
silver-filled epoxies are recom-
mended. This method can be used
for all Hewlett-Packard PIN chips.
4. Wire Bonding
Either ultrasonic, thermosonic or
thermocompression bonding
techniques can be employed.
Suggested wire is pure gold, 0.7 to
1.5 mil diameter.