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參數(shù)資料
| 型號： | HN58V66AI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位)) |
| 中文描述： | 64畝的EEPROM（8 KWord的× 8位）（64畝的EEPROM（8K的字× 8位）） |
| 文件頁數(shù)： | 20/30頁 |
| 文件大?。?/td> | 203K |
| 代理商： | HN58V66AI |
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HN58V65AI Series, HN58V66AI Series, HN58V65A-SR Series,
HN58V66A-SR Series
20
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write
cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each
additional byte load cycle must be started within 30
μ
s from the preceding falling edge of
WE
or
CE
. When
CE
or
WE
is kept high for 100
μ
s after data input, the EEPROM enters write mode automatically and the
input data are written into the EEPROM.
Data
Polling
Data
polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read
mode during a write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the
EEPROM is performing a write operation.
RDY/
Busy
Signal
RDY/
B us y
signal also allows status of the EEPROM to be determined. The RDY/
Busy
signal has high
impedance except in write cycle and is lowered to V
OL
after the first write signal. At the end of a write
cycle, the RDY/
Busy
signal changes state to high impedance.
RES
Signal
(only the HN58V66A series)
When
RES
is low, the EEPROM cannot be read or programmed. Therefore, data can be protected by
keeping
RES
low when V
CC
is switched.
RES
should be high during read and programming because it
doesn’t provide a latch function.
V
Program inhibit
CC
RES
Program inhibit
Read inhibit
Read inhibit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58V65AP-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
| HN58V66AP-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
| HN58V65AT-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
| HN58V66AT-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
| HN58V65AFP-10 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58V66AISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V66AP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) |
| HN58V66AP10E | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:EEPROM,Parallel,64K,70/100ns,DIP28 制造商:Renesas 功能描述:EEPROM Parallel 64K-bit 8K x 8 3.3V/5V 28-Pin PDIP |
| HN58V66AP-10E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A) |
| HN58V66API-10 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version |
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