參數(shù)資料
型號(hào)： HN58V257A
廠商： Hitachi,Ltd.
英文描述： 256k EEPROM (32-kword ×8-bit)(256k EEPROM (32k字 ×8位))
中文描述： 256k的EEPROM（32 KWord的× 8位）（256k的EEPROM（32K的字× 8位））
文件頁數(shù)： 25/26頁
文件大小： 170K
代理商： HN58V257A
HN58V256A Series, HN58V257A Series
25
Revision Record
Rev.
Date
Contents of Modification
Drawn by
Approved by
0.0
Mar. 15, 1995
Initial issue
M. Terasawa
T. Muto
0.1
Aug. 7, 1995
Determination of package type:
HN58V256AT series (TFP-28DB)
Deletion of HN58V256AP series (DP-28)
Deletion of HN58V256AFPI-12/15
Deletion of HN58V256AT-12SR/15SR
Deletion of HN58V257AT-12SR/15SR
Absolute Maximum Rating
Deletion of Device Group
Deletion of Operating temperature range
– 20 to + 85
°
C and – 40 to +85
°
C
Recommended DC Operating Conditions
Deletion of Device Group
Deletion of Operating temperature range
–20/—/85
°
C and –40/—/85
°
C
Deletion of note 4
Change order of notes
M. Terasawa
T. Muto
1.0
Apr. 12, 1995
Change of format
Operating Information
Deletion of HN58V256A-15 and HN58V257A-15
Deletion of note 1
Deletion of Compatible type No.
Deletion of Operating temperature range
Pin Description
Addition of note 1
Block Diagram
Addition of note 1
Mode Selection
Addition of note 3
Absolute Maximum Ratings
Addition of note 4
Recommended DC operating Condition
V
(min) 2.4 V to 1.9 V
Addition of note 4
DC Characteristics
I
(max): 8/12/20/30 mA to 8/12/15/30 mA
AC Characteristics
Test condition: Input pulse levels: 0 V to 3.0 V to
0.4 V to 2.4 V(V
CC
≤
3.6 V), 0.4 V to 3.0 V(V
CC
>
3.6V)
Addition of note 2
Read Timing Waveform: Addition of note 1
Write Cycle: t
(min): 50 ns to 70 ns
Addition of note 4, 5
Byte Write Timing Waveform (1) and (2):
Addition of note 1
Page Write Timing Waveform (1) and (2):
Addition of note 2
M. Terasawa
T. Wada
相關(guān)PDF資料
PDF描述
HN58V65AI 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位))
HN58V66AI 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位))
HN58V65AP-10 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)
HN58V66AP-10 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)
HN58V65AT-10 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HN58V257ASERIES 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM
HN58V257AT-12 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V257AT12E 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:EEPROM,Parallel,256K,3V,120ns,TSOP32 制造商:Renesas 功能描述:EEPROM Parallel 256K-Bit 32K x 8 3V 32-Pin TSOP
HN58V257AT-12E 制造商:Renesas 功能描述:EEPROM Parallel 256K-Bit 32K x 8 3V 32-Pin TSOP
HN58V257R-30 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM
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