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參數(shù)資料
| 型號： | HN58S65AI |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM) |
| 中文描述： | 8192字× 8位電可擦除和可編程的CMOS光盤（8K的字× 8位的EEPROM） |
| 文件頁數(shù)： | 15/19頁 |
| 文件大?。?/td> | 134K |
| 代理商： | HN58S65AI |
Datasheet Title
15
Data Protection
1. Data Protection against Noise on Control Pins (
CE
,
OE
,
WE
) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake.
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 15
ns or less.
Be careful not to allow noise of a width of more than 15 ns on the control pins.
WE
CE
OE
V
0 V
V
0 V
15 ns max
IH
IH
2. Data protection at V
CC
on/off
When V
CC
is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act as
a trigger and turn the EEPROM to program mode by mistake. To prevent this unintentional programming,
the EEPROM must be kept in an unprogrammable state while the CPU is in an unstable state.
Note:
The EEPROM should be kept in unprogrammable state during V
CC
on/off by using CPU RESET
signal.
V
CC
CPU
RESET
Unprogrammable
Unprogrammable
*
*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58S65AT-15 | 64 k EEPROM (8-kword x 8-bit) Ready/Busy function |
| HN58S65A | 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位)) |
| HN58V1001P-25 | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| HN58V1001FP-25 | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| HN58V1001T-25 | 5015 RR 3#8 SKT RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58S65AISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58S65ASERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HN58S65AT-15 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:64 k EEPROM (8-kword x 8-bit) Ready/Busy function |
| HN58S65ATI-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V1001 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function |
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