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參數(shù)資料
| 型號(hào)： | HN58S65A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k字 ×8位)) |
| 中文描述： | 64畝的EEPROM（8 KWord的× 8位）（64畝的EEPROM（8K的字× 8位）） |
| 文件頁數(shù)： | 14/19頁 |
| 文件大小： | 144K |
| 代理商： | HN58S65A |
HN58S65A Series
14
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write
cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner.
Each additional byte load cycle must be started within 30 μs from the preceding falling edge of
:(
or
&(
. When
&(
or
:(
is kept high for 100 μs after data input, the EEPROM enters write mode
automatically and the input data are written into the EEPROM.
'DWD
Polling
'DWD
polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read
mode during a write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the
EEPROM is performing a write operation.
RDY/
%XV\
Signal
RDY/
%XV\
signal also allows status of the EEPROM to be determined. The RDY/
%XV\
signal has high
impedance except in write cycle and is lowered to V
OL
after the first write signal. At the end of a write
cycle, the RDY/
%XV\
signal changes state to high impedance.
:(
,
&(
Pin Operation
During a write cycle, addresses are latched by the falling edge of
:(
or
&(
, and data is latched by the
rising edge of
:(
or
&(
.
Write/Erase Endurance and Data Retention Time
The endurance is 10
programming (1% cumulative failure rate). The data retention time is more than 10 years when a device
is page-programmed less than 10
5
cycles in case of the page programming and 10
4
cycles in case of the byte
4
cycles.
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| HN58V1001P-25 | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| HN58V1001FP-25 | 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
| HN58V1001T-25 | 5015 RR 3#8 SKT RECP |
| HN58V1001 | 1M EEPROM (128-kword ×8-bit)(1M EEPROM (128k字 ×8位)) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58S65AISERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58S65ASERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HN58S65AT-15 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:64 k EEPROM (8-kword x 8-bit) Ready/Busy function |
| HN58S65ATI-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58V1001 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function |
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