參數(shù)資料
型號: HN58C66
廠商: Hitachi,Ltd.
英文描述: 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM)
中文描述: 8192字× 8位電可擦除和可編程的CMOS光盤(8K的字× 8位的EEPROM)
文件頁數(shù): 14/19頁
文件大小: 172K
代理商: HN58C66
HN58C66 Series
14
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 32 bytes of data to be written into the EEPROM in a single write cycle.
Following the initial byte cycle, an additional 1 to 31 bytes can be written in the same manner. Each
additional byte load cycle must be started within 30
μ
s from the preceding falling edge of
WE
or
CE
. When
CE
or
WE
is high for 100
μ
s after data input, the EEPROM enters write mode automatically and the input
data are written into the EEPROM.
Data
Polling
Data
polling allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O7 to indicate that the EEPROM
is performing a write operation.
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