參數(shù)資料
型號(hào): HN1B26FS
廠商: Toshiba Corporation
英文描述: General-Purpose Amplifier Applications
中文描述: 通用放大器應(yīng)用
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 170K
代理商: HN1B26FS
HN1B26FS
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1B26FS
General-Purpose Amplifier Applications
Q1
High voltage and high current
: V
CEO
= 50 V, I
C
= 100 mA (max)
Excellent h
FE
linearity : h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
High h
FE :
h
FE
= 120~400
Q2
High voltage and high current
: V
CEO
=
50 V, I
C
=
100 mA (max)
Excellent h
FE
linearity :
h
FE
(I
C
=
0.1 mA)/h
FE
(I
C
=
2 mA) =
0.95 (typ.)
High h
FE :
h
FE
= 120~400
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
60
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Base current
I
B
30
mA
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Base current
I
B
30
mA
Q1, Q2 Common Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
50*
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Unit: mm
JEDEC
JEITA
TOSHIBA
2-1F1D
Weight: 0.0008 g (typ.)
fS6
0
0.1±0.05
6
0.8±0.05
1.0±0.05
0
1
2
0.1±0.05
0
0
3
1
0
5
4
0
+
-
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
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