參數(shù)資料
型號(hào): HN1A01FY
英文描述: TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
中文描述: 晶體管|晶體管|一對(duì)|進(jìn)步黨| 50V五(巴西)總裁| 150毫安一(c)|的TSOP
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 150K
代理商: HN1A01FY
HN1A01F
2001-06-07
1
TOSHIBA Transistor Silicon PNP
Epitaxial
Type (PCT Process)
HN1A01F
Audio Frequency General Purpose Amplifier
Applications
Small package (dual type)
High voltage and high current
: V
CEO
=
50V, I
C
=
1
50mA (max)
High h
FE
: h
FE
=
1
20~400
Excellent h
FE
linearity
: h
FE
(I
C
=
0.
1
mA) / h
FE
(I
C
=
2mA) = 0.95 (typ.)
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Base current
I
B
30
mA
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
125
C
Storage temperature range
T
stg
55~125
C
*
Total rating
Electrical Characteristics
(Ta = 25 C) (Q1,Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
50V, I
E
= 0
0.1
μA
Emitter cut-off current
I
EBO
V
EB
=
5V, I
C
= 0
0.1
μA
DC current gain
h
FE (note)
V
CE
=
6V, I
C
=
2mA
120
400
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
100mA, I
B
=
10mA
0.1
0.3
V
Transition frequency
f
T
V
CE
=
10V, I
C
=
1mA
80
MHz
Collector output capacitance
C
ob
V
CB
=
10V, I
E
= 0,
f = 1MHz
4
7
pF
Note: hFE Classification
Y (Y):
1
20~240, GR (G): 200~400
( ) Marking Symbol
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
2-3N1A
Unit: mm
相關(guān)PDF資料
PDF描述
HN1A01FU PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
HN1A01F PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
HN1A02F Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications
HN1A07F Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Small Power Amplifier Applications
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